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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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QPD1025LS2 датащи(PDF) 4 Page - TriQuint Semiconductor |
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QPD1025LS2 датащи(HTML) 4 Page - TriQuint Semiconductor |
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4 / 18 page  QPD1025L 1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor Datasheet Rev. B │ Subject to change without notice - 4 of 18 - www.qorvo.com Measured Load-Pull Smith Charts 1, 2, 3 Notes: 1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 13 for load pull reference planes where the performance was measured. 4. 1.0GHz, Load-pull 59.1 58.9 58.7 58.5 58.3 58.1 57.9 57.7 19.9 19.4 69.4 71.4 73.4 75.4 77.4 • Max Power is 59.2dBm at Z = 2.31+0.392i = -0.1238+0.0829i • Max Gain is 20.3dB at Z = 1.718+2.043i = -0.0709+0.4636i • Max PAE is 78.5% at Z = 2.863+2.045i = 0.0876+0.3182i Zo = 3 3dB Compression Referenced to Peak Gain Zs(fo) = 0.72-1.76i Zs(2fo) = 0.47+0.06i Zs(3fo) = 0.81+0.5i Zl(2fo) = 0.79+0.69i Zl(3fo) = NaN Power Gain PAE |
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