2SB1431 datasheet(1/2 Pages) ISC

номер детали	2SB1431

подробное описание детали	isc Silicon PNP Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

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isc Silicon PNP Darlington Power Transistor

2SB1431

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min)

·

High DC Current Gain-

: hFE= 2000(Min)@ (VCE= -2V, IC= -3A)

·

Low Collector Saturation Voltage

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for low-frequency power amplifiers and low-

speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

-12

A

IB

Base Current-Continuous

-0.8

A

PC

Collector Power Dissipation

@Ta=25℃

2

W

Collector Power Dissipation

@TC=25℃

25

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

Аналогичный номер детали - 2SB1431

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NEC	2SB1431	132Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
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