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Any changes of specification will not be informed individually.

Elektronische Bauelemente

SST8205J

Ω

Ω

Ω

N-Ch Enhancement Mode Power MOSFET

22-Oct-2015 Rev. A

Page 2 of 3

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

Drain-Source Breakdown Voltage

19

-

-

V

Drain-Source Leakage Current

-

-

1

µA

Gate-Body Leakage Current

-

-

nA

Gate-Threshold Voltage

3

0.5

-

0.9

V

-

-

25

Drain-Source On-Resistance

3

-

-

32

m

Forward Transconductance

3

-

10

-

S

Diode Forward Voltage

3

-

-

1.2

V

Switching Characteristics

Total Gate Charge

-

11

-

Gate-Source Charge

-

2.3

-

Gate-Drain (“Miller”) Charge

-

2.5

-

nC

Turn-on Delay Time

-

18

-

Rise Time

-

5

-

Turn-off Delay Time

-

43

-

Fall Time

-

20

-

nS

Dynamic Characteristics

Input Capacitance

-

800

-

Output Capacitance

-

155

-

Reverse Transfer Capacitance

-

125

-

pF

f=1MHz

Notes:

1.

Repetitive rating : Pulse width is limited by the maximum junction temperature.

2.

Surface Mounted on FR4 board, t≤10sec.

3.

Pulse test : Pulse width≤300µs, duty cycle≤2%.