SST8205J datasheet(1/3 Pages) SECOS

номер детали	SST8205J

подробное описание детали	N-Ch Enhancement Mode Power MOSFET

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Elektronische Bauelemente

SST8205J

6A, 19V, RDS(ON) 25 mΩ

Ω

N-Ch Enhancement Mode Power MOSFET

22-Oct-2015 Rev. A

Page 1 of 3

B

L

F

H

C

J

D G

K

A

E

L8205

141

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SST8205J provides the designers with the best combination

of fast switching, low on-resistance and cost-effectiveness.

SOT-26 package is universally used for all commercial-

industrial surface mount applications.

FEATURES

TrenchFET power MOSFET

Excellent RDS(ON)

Low gate charge

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-26

3K

7 inch

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

19

V

Gate-Source Voltage

VGS

±10

V

Continuous Drain Current

ID

6

A

Pulsed Drain Current

1

IDM

25

A

Thermal Resistance from Junction to Ambient

2

RθJA

357

°C / W

Lead Temperature for Soldering Purposes@1/8’’ from case

for 10s

TL

260

°C

Junction and Storage Temperature Range

TJ, TSTG

150, -55~150

°C

SOT-26

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

0

0.10

B

2.60

3.00

H

0.60 REF.

C

1.40

1.80

J

0.12 REF.

D

1.30 MAX.

K

0°

10°

E

1.90 REF.

L

0.95 REF.

F

0.30

0.50

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SST8205J датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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Аналогичное описание - SST8205J

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