11/20

ASB Inc.

 sales@asb.co.kr

April 2016

ASX1436

4. Application 2: 13.75

– 14.50 GHz, VDD = +7V, IDD = 1300mA

4.1 Application Circuit



In case of one VGG and one VDD bias applied.

4.2 Biasing Procedure



Make sure no RF power is applied to the device before continuing.



Pinch off device by setting VGG to -1.5 V.



Raise VDD to +7 V while monitoring drain current.



Raise VGG until drain current reaches 1300 mA. VGG should be between -1.5 and -0.5 V.



Apply RF power.



To improve the thermal and RF performance, ASB recommends a heat sinker attached to the

bottom of the package with an Indium alloy preform.

Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to

prevent video oscillations which could damage the module.

Case 1

Case 2

Case 3

Case 4