ASX1436 datasheet(2/20 Pages) ASB

номер детали	ASX1436

подробное описание детали	Ku Band Power Amplifier MMIC

PDF	20 Pages

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производитель	ASB [Advanced Semiconductor Business Inc.]

домашняя страница	http://www.asb.co.kr

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ASB Inc.

 sales@asb.co.kr

January 2017

ASX1436

2. Summary on Product Performances

2.1 Typical Performance

Test conditions : T = +25

C, VDD = +7 V, CW, ZO = 50 

Parameters

Test Conditions

Min

Typ

Max

Units

Gate Bias Voltage

f = 13.75 - 14.50 GHz

-0.8

-0.5

Output Power at Psat1)

f = 13.75 - 14.50 GHz

dBm

Power Gain at Psat1)

f = 13.75 - 14.50 GHz

Drain Current at Psat1)

f = 13.75 - 14.50 GHz

1550

1700

Power Added Efficiency at Psat1)

f = 13.75 - 14.50 GHz

Gain Flatness

f = 13.75 - 14.50 GHz

1.5

2.0

Input Return Loss

f = 13.75 - 14.50 GHz

-10

-6

Output Return Loss

f = 13.75 - 14.50 GHz

-15

-8

Output TOI2)

f = 10 MHz

2-Tone Test

Output power / Tone = +26 dBm

41.5

dBm

Supply Current

VDD = +7 V

1300

1) Psat: Saturated output power

2) TOI: Third order intercept point

2.2 Product Specification

Test conditions : T = +25

C, VDD= +7 V, CW, VGG = -0.8 V typical, ZO = 50 

Parameter

Min

Typ

Max

Unit

Frequency

13.75

14.50

GHz

Small Signal Gain

29.5

31.5

Input Return Loss

-10

-6

Output Return Loss

-15

-8

Supply Current

1300

2.3 Absolute Maximum Ratings

Parameters

Max. Ratings

Operating Case Temperature (Tc)

-40 to

85 C

Storage Temperature (Tstg)

-55 to

125 C

Drain Voltage (VDD)

+9 V

Gate Voltage (VGG)

-1.5 to -0.5 V

Input RF Power (Pin)

+18 dBm

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