Elektronische Bauelemente

SSM9573

Ω

Ω

Ω

P-Channel Enhancement Mode Power MOSFET

11-Aug-2014 Rev.A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

-60

-

-

V

Gate-Threshold Voltage

-1

-

-3

V

Gate-Source Leakage Current

-

-

±100

nA

-

-

-1

Drain-Source Leakage

Current

-

-

-5

µA

-

-

175

Static Drain-Source On-Resistance

2

-

-

230

m

Total Gate Charge

-

4.59

-

Gate-Source Charge

-

1.39

-

Gate-Drain (‘‘Miller’’) Change

-

1.62

-

nC

Turn-on Delay Time

2

-

17.4

-

Rise Time

-

5.4

-

Turn-off Delay Time

-

37.2

-

Fall Time

-

2.4

-

nS

Input Capacitance

-

531

-

Output Capacitance

-

59

-

Reverse Transfer Capacitance

-

38

-

pF

f =1.0MHz

Source-Drain Diode

Diode Forward Voltage

2

-

-

-1.2

V

Continuous Source Current

1.4

-

-

-2.7

A

Pulsed Source Current

2.4

-

-

-5

A

Note:

1. Surface mounted on a 1 inch2 FR4 board with 2OZ copper, t ≦10sec. , 125°C /W when mounted on Min. copper pad.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The power dissipation is limited by 150°C junction temperature

4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.