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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SSM9573 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSM9573 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSM9573 -2.7A , -60V , RDS(ON) 175mΩ Ω Ω Ω P-Channel Enhancement Mode Power MOSFET 11-Aug-2014 Rev.A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM9573 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V TA=25°C -2.7 A Continuous Drain Current 1@V GS=10V TA=70°C ID -2 A Pulsed Drain Current 2 IDM -5 A Power Dissipation 3 TA=25°C P D 1.5 W Operating Junction & Storage Temperature TJ, TSTG -55~150 °C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1(Max). RθJA 85 °C / W Thermal Resistance Junction-Case 1(Max). RθJC 60 °C / W 9573 = Date code SOT-223 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.42 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 Top View 1 2 3 4 A M B D L K F G H J E C 1 Gate 3 Source 2 Drain |
Аналогичный номер детали - SSM9573 |
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Аналогичное описание - SSM9573 |
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ссылки URL |
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