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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IC-HT датащи(PDF) 7 Page - IC-Haus GmbH |
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IC-HT датащи(HTML) 7 Page - IC-Haus GmbH |
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7 / 45 page  prel imin ary prel imin ary iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 7/45 ELECTRICAL CHARACTERISTICS Operating Conditions: VB = 2.8 . . . 11 V (referenced to GND), Tj = -40 . . . 125 °C unless otherwise stated Item Symbol Parameter Conditions Unit No. Min. Typ. Max. 114 Idc(LDK) LDKx ACC mode current EC1, EC2, EMC = hi, EACCx = 1, V(LDKx) = 0.7 V . . . VB - 1.5 V REFx(9:0) = 0x000, RACCx = 0 50 82 120 mA REFx(9:0) = 0x3FF, RACCx = 0 650 750 1400 mA REFx(9:0) = 0x000, RACCx = 1 5 10 15 mA REFx(9:0) = 0x3FF, RACCx = 1 70 113 160 mA 115 Tk Temperature coefficient ACC mode -1500 -500 0 ppm/K Programmable Resistor 201 Rmda Resistor at MDAx pin RMDx(7:0) = 0xF0 . . . 0xFF, DISPx = 0 350 500 650 kΩ RMDx(7:0) = 0x00 . . . 0x0F, DISPx = 0 0.154 0.220 0.286 kΩ 202 Tk Temperature coefficient -1500 -500 0 ppm/K 203 ∆ R Resistor increment ∆ R = R(n+1)−R(n) R(n) 2 3.3 5 % 204 Ileak(MDA) MDAx leakage current DISPx = 1 -1 1 µA D/A Converter 301 R(DAC) D/A Converter Resolution 10 bit 302 ∆ V Percentual voltage increments ∆ V = V (n+1)−V (n) V (n) 0.1 0.235 0.5 % 303 V(DAC) D/A Converter REFx(9:0) = 0x000 lowest value 0.09 0.10 0.12 V REFx(9:0) = 0x3FF highest value 1.00 1.10 1.25 V Check Output NCHK 401 Vs()lo Saturation Voltage lo at NCHK I(NCHK) = 1.0 mA 0.4 V 402 Isc()lo Short Circuit Current lo at NCHK V(NCHK) = 0.4 . . . 3.3 V 9 33 mA 403 Ilk() Leakage Current at NCHK NCHK = 1; V(NCHK) = 0 . . . 5.5 V -1 1 µA Series Regulator Output VDD 501 V(VDD) Regulated output voltage VB = 3.7 . . . 8 V, I(VDD) = -10 . . . 0 mA NSTBY = hi 3 3.5 V 502 V(VB,VDD) Voltage Drop between VB and VDD VDD unregulated, I(VDD) = -10 . . . 0 mA NSTBY = hi 100 400 mV 503 C(VOUT) Capacitor at VDD Ri(C) < 1 Ω 1 3.3 µF 504 Tvdd Settling time VDD NSTBY lo → hi, no load at VDD, V(VDD) 0 to 90 % CVDD = 1 µF 1 ms Digital inputs 601 Vt()hi Input Threshold Voltage hi at EMC, NCS/A1, MISO/SDA, MOSI/A0, SCLK/SCL, INS/WKR, NSTBY, EC1, EC2 2 V 602 Vt()lo Input Threshold Voltage lo at EMC, NCS/A1, MISO/SDA, MOSI/A0, SCLK/SCL, INS/WKR, NSTBY, EC1, EC2 VB > 3 V 0.7 V VB = 2.8 V 0.6 V 603 Vt()hys Hysteresis at EMC, NCS/A1, MISO/SDA, MOSI/A0, SCLK/SCL, INS/WKR, NSTBY, EC1, EC2 Vt()hys = Vt()hi - Vt()lo 100 mV 604 Ipd() Pull-Down Current at MOSI/A0, EC1, EC2 V() = 0.4 V . . . VDD 1 50 µA 605 Ipd() Pull-Down Current at NSTBY V() = 0.4 V . . . VB 1 50 µA 606 Rpu() Pull-Up Resistor at SCLK/SCL, NCS/A1 80 150 260 kΩ 607 Rpu() Pull-Up Resistor at MISO/SDA EMC = hi, INS/WKR = lo 8 20 50 kΩ EMC = hi, INS/WKR = hi 53 100 174 kΩ 608 Er() Safe enable threshold voltage at EMC, INS/WKR Rising 52 54 56 % VDD Falling 30 32 34 % VDD |
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