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iC-HT

DUAL CW LASER DIODE DRIVER

Rev B1, Page 6/45

ELECTRICAL CHARACTERISTICS

Operating Conditions: VB = 2.8 . . . 11 V (referenced to GND), Tj = -40 . . . 125 °C unless otherwise stated

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

Total Device

Functionality and parameters beyond the operating conditions (with reference to independent voltage supplies, for instance) are to be

verified within the individual application using FMEA methods.

001

VB

Permissible Supply Voltage

Referenced to GND

2.8

11

V

002

I(VB)

Standby Current at VB

V(NSTBY) ≤ 0.4 V

10

µA

003

I(VB)

Supply Current at VB

No load, EC1, EC2, NSTBY = hi

5

mA

004

V(VB)on

Turn-on threshold

Increasing VB

1.7

2.7

V

005

V(VB)off

Turn-off threshold

Decreasing VB

1.6

2.6

V

006

V(VB)Hys

Power-on hysteresis

20

250

mV

007

V(VDD)on Turn-on threshold

Increasing VDD

1.7

2.4

V

008

V(VDD)off Turn-off threshold

Decreasing VDD

1.6

2.3

V

009

V(VDD)Hys Power-on hysteresis

20

250

mV

010

V(VB)INITR RAM memory reset during

Stand-By

NSTBY = lo

0.85

1.4

V

011

Rgnd()

Resistor to GND at MRL1, MRL2

20

Ω

012

Ragnd()

Resistor to AGNDx at CILx

20

Ω

013

Vc()lo

Clamp Voltage lo at VB,

VDD, NCHK, EMC, NCS/A1,

MISO/SDA, MOSI/A0,

SCLK/SCL, INS/WKR, NSTBY,

EC1, EC2, DCO, LDK1, LDK2,

CI1, CIL1, CI2, CIL2, AGND1,

AGND2, MDA1, MDA2

I() = -10 mA

-1.6

-0.3

V

Laser Driver LDKx, CIx, MDAx

101

Vs(LDK)lo Saturation Voltage lo at LDK

I(LDKx) = 750 mA

0.7

V

102

V(LDKSAT) LDKx saturation detection

threshold

RLDKSx = 00

0.35

0.5

0.65

V

RLDKSx = 01

0.55

0.7

0.85

V

RLDKSx = 10

0.85

1

1.15

V

RLDKSx = 11

1.05

1.2

1.35

V

103

Idc(LDK)

Permissible DC Current at LDKx

750

mA

104

Ileak(LDK) LDKx leakage current

V(LDKx) = 11 V

10

µA

105

C(CI)

Possible capacitor at CI1, CI2

ECIE = 0, EMC = hi

0

µF

106

I(CI)

Charge Current at CI1, CI2

V(CI) = 0 V, EC1, EC2 = hi, ECIEx = 1

-220

-30

µA

COMP = 111

107

I(LDK)max Laser overcurrent shutdown

threshold

V(LDKx) = 0.7 V . . . VB - 1.5 V

ILIMx(7:0) = 0x00, RACCx = 0

0

25

mA

ILIMx(7:0) = 0xFF, RACCx = 0

750

1400

mA

ILIMx(7:0) = 0x00, RACCx = 1

0

3.2

mA

ILIMx(7:0) = 0xFF, RACCx = 1

80

175

mA

108

∆

I(LDK)

Shutdown threshold resolution

RACCx = 0

2.8

4

5.2

mA

RACCx = 1

0.3

0.5

0.8

mA

109

tovc

Time to overcurrent shutdown

Laser current decreased 10%

1

5

µs

110

V(MDA)

Voltage at MDA1, MDA2

Closed control loop

EC1, EC2 = hi

EMC = lo, INS/WKR = lo

225

250

275

mV

EMC = lo, INS/WKR = hi

455

500

545

mV

111

Ten

Time to laser enabled

NSTBY lo → hi, no load at VDD,

1.3

ms

V(VDD) 0 to 90 %,

CVDD = 1 µF, EMC = lo

112

Tci

Time to light

NSTBY = hi, ECIE = 0, COMP = 010,

light off to 80 % target value

300

µs

113

Tcio

Time to target light

Light from 80 % to 99 % target value

4700

µs