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BCR20AM датащи(PDF) 3 Page - Mitsubishi Electric Semiconductor

номер детали BCR20AM
подробное описание детали  MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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производитель  MITSUBISHI [Mitsubishi Electric Semiconductor]
домашняя страница  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

BCR20AM датащи(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
(
Ι, ΙΙ AND ΙΙΙ)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
10–1
100
2
3
5
7
101
2
3
5
7
102
2
3
5
7
101 2
102
35 7
2
103
35 7
2
104
35 7
PGM = 5W
IGM = 2A
VGT = 1.5V
VGM = 10V
PG(AV) = 0.5W
IFGT I , IRGT I , IRGT III
VGD = 0.2V
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
TYPICAL EXAMPLE
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
100
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
–60
–20
20
60
100
140
–40
0
40
80
120
IRGT I
IRGT III
IFGT I
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
23 5 7
23 5 7
101
23 5 7
100
10–1
102 23 5 7103
0
10
20
30
40
50
0
4
8
12
16
20
24
28
32
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
0
20
40
60
80
100
120
140
160
0
2
4
6
8
101214161820
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)



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