Feb.1999

ELECTRICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR20AM

MEDIUM POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

PERFORMANCE CURVES

V2. Measurement using the gate trigger characteristics measurement circuit.

V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.

°C/W.

Unit

Repetitive peak off-state current

On-state voltage

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltage

Limits

Max.

2.0

1.5

1.5

1.5

1.5

—

0.8

—

!

@

#

!

@

#

Typ.

—

—

—

—

—

—

—

—

—

—

—

Min.

—

—

—

—

—

—

—

—

0.2

—

V3

mA

V

V

V

V

mA

mA

mA

V

°C/W

V/

µs

Symbol

Parameter

Test conditions

Voltage

class

(V)

Symbol

Test conditions

Commutating voltage and current waveforms

(inductive load)

Unit

V/

µs

Min.

1. Junction temperature

°C

2. Rate of decay of on-atate

commutating current

3. Peak off-state voltage

8

400

L

R

10

—

12

600

L

R

10

—

MAXIMUM ON-STATE

CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE

CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

23

80

40

23

44

120

160

200

60

20

100

140

180

0

4.0

0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6

7

5

3

2

7

5

3

2

7

5

3

2

°C

°C

SUPPLY

VOLTAGE

TIME

TIME

TIME

MAIN

CURRENT

MAIN

VOLTAGE