Elektronische Bauelemente

SSD30N02

N-Ch Enhancement Mode Power MOSFET

29-Apr-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

20

-

-

V

-

-

1

Drain-Source Leakage Current

-

-

30

µA

Gate-Source Leakage Current

-

-

±100

nA

Gate-Threshold Voltage

0.5

0.7

1

V

-

16

21

Static Drain-Source On-Resistance

2

-

21

26

m

Input Capacitance

-

600

-

Output Capacitance

-

100

-

Reverse Transfer Capacitance

-

72

-

pF

f=1MHz

Total Gate Charge

-

6.5

-

Gate-Source Charge

-

0.9

-

Gate-Drain (“Miller”) Charge

-

2

-

nC

Turn-on Delay Time

-

8.5

-

Rise Time

-

13

-

Turn-off Delay Time

-

23.5

-

Fall Time

-

4

-

nS

Source-Drain Diode Characteristics

Diode Forward Voltage

2

-

-

1.2

V

Continuous Source Current

1,4

-

-

30

A

Pulsed Source Current

2,4

-

-

40

A

Reverse Recovery Time

-

9

-

nS

Reverse Recovery Charge

-

3

-

nC

Notes:

1.

The data is tested when the surface of the device is mounted on a 1 inch

2.

The data is tested by the pulse: Pulse width≦300µs, duty cycle≦2%.

3.

The power dissipation is limited by 150°C juncti on temperature.

4.