| поискавой системы для электроныых деталей |
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SSD30N02 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSD30N02 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() Elektronische Bauelemente SSD30N02 30A, 20V, RDS(ON) 21 m N-Ch Enhancement Mode Power MOSFET 29-Apr-2016 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E F H K J M B TO-252(D-Pack) 30N02 RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD30N02 is the highest performance trench N-ch MOSFET with extreme high cell density, which provides excellent RDS(ON) and gate charge for most synchronous buck converter applications. SSD30N02 meets the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available MARKING PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V TC=25°C 30 TC=100°C 19 TA=25°C 9 Continuous Drain Current 1 TA=70°C ID 7 A Pulsed Drain Current@ TC=25°C 2 IDM 40 A Total Power Dissipation@ TC=25°C 3 PD 27.8 W Maximum Thermal Resistance from Junction to Ambient 1 RθJA 50 Maximum Thermal Resistance from Junction to Case 1 RθJC 4.5 °C / W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Date Code 1 Gate 3 Source 2 Drain Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.35 6.90 J 2.336 REF. B 4.95 5.50 K 0.89 REF. C 2.10 2.50 M 0.50 1.14 D 0.665 Typ. N 1.55 Typ. E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20 |
Аналогичный номер детали - SSD30N02 |
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Аналогичное описание - SSD30N02 |
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