IL211AT, IL212AT, IL213AT

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 21-Dec-10

2

Document Number: 83615

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Note

• Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering

evaluations. Typical values are for information only and are not part of the testing requirements.

COUPLER

Isolation test voltage

4000

Total package dissipation

LED and detector

240

mW

Derate linearly from 25 °C

3.2

mW/°C

Storage temperature

-55 to +150

°C

Operating temperature

-55 to +100

°C

Soldering time

at 260 °C

10

s

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

-1.3

1.5

V

Reverse current

-

0.1

100

μA

Capacitance

-13

-

pF

OUTPUT

Collector emitter breakdown voltage

30

-

-

V

Emitter collector breakdown voltage

7-

-

V

Collector dark current

-

5

50

nA

Collector emitter capacitance

-10

pF

COUPLER

Saturation voltage, collector emitter

--

0.4

V

Isolation test voltage

1 s

4000

-

-

Capacitance (input to output)

-0.5

50

pF

Resistance (input to output)

-100

-

G

Ω

Collector emitter breakdown voltage

30

-

-

V

CURRENT TRANSFER RATIO

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Current transfer ratio

IL211AT

CTR

20

50

-

%

IL212AT

CTR

50

80

-

%

IL213AT

CTR

100

130

-

%

SWITCHING CHARACTERISTICS

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Switching time

Ω,

-3

-

μs

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT