IL211AT, IL212AT, IL213AT

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 21-Dec-10

1

Document Number: 83615

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Optocoupler, Phototransistor Output,

with Base Connection in SOIC-8 Package

DESCRIPTION

The IL211AT, IL212AT, IL213AT are optically coupled pairs

with a gallium arsenide infrared LED and silicon NPN

phototransistor. Signal information, including a DC level,

can be transmitted by the device while maintaining a high

degree of electrical isolation between input and output.

The IL211AT, IL212AT, IL213AT comes in a standard

SOIC-8 small outline package for surface mounting which

makes it ideally suited for high density applications with

limited space. In addition to eliminating through-holes

requirements, this package conforms to standards for

surface mounted devices.

A choice of 20 %, 50 %, and 100 % minimum CTR at

of different applications.

FEATURES

• Industry standard SOIC-8 surface mountable

package

• Compatible with dual wave, vapor phase and IR

reflow soldering

• Material categorization:

for

definitions

of

compliance

please

see

www.vishay.com/doc?99912

AGENCY APPROVALS

• UL1577, file no. E52744 system code Y

• cUL - file no. E52744, equivalent to CSA bulletin 5A

Note

i179002-1

1

2

3

4

A

K

NC

NC

8

7

6

5

NC

B

C

E

V

DE

i179025

ORDERING INFORMATION

IL

2

1

#

A

T

PART NUMBER

AGENCY CERTIFIED/PACKAGE

CTR (%)

10 mA

UL, cUL

> 20

> 50

> 100

SOIC-8

IL211AT

IL212AT

IL213AT

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Peak reverse voltage

6V

Forward continuous current

60

mA

Power dissipation

90

mW

Derate linearly from 25 °C

1.2

mW/°C

OUTPUT

Collector emitter breakdown voltage

30

V

Emitter collector breakdown voltage

7V

Collector base breakdown voltage

70

V

50

mA

t < 1 ms

100

mA

Power dissipation

150

mW

Derate linearly from 25 °C

2mW/°C

SOIC-8

6.1 mm