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TSZ182IST датащи(PDF) 10 Page - STMicroelectronics

номер детали TSZ182IST
подробное описание детали  Very high accuracy (25 μV) high bandwidth (3 MHz) zero drift 5 V dual operational amplifiers
PDF  39 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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TSZ182IST датащи(HTML) 10 Page - STMicroelectronics

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Electrical characteristics
TSZ182
10/39
DocID029836 Rev 1
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
GBP
Gain bandwidth product
T = 25 °C, RL = 10
kΩ,
CL = 100 pF
2
3
MHz
-40 °C < T< 125 °C,
RL = 10
kΩ, CL = 100 pF
1.6
Φm
Phase margin
RL = 10
kΩ, CL = 100 pF
56
degrees
Gm
Gain margin
15
dB
SR
Slew rate (4)
T = 25 °C
2.9
4.7
V/µs
-40 °C < T< 125 °C
2.4
ts
Settling time
To 0.1 %, Vin = 1.5 Vpp
600
ns
To 0.01 %, Vin = 1 Vpp
4
µs
en
Equivalent input noise voltage
f = 1 kHz
37
nV/√Hz
f = 10 kHz
37
en-pp
Voltage noise
f = 0.1 to 10 Hz
0.4
µVpp
Cs
Channel separation
f = 100 Hz
135
dB
tinit
Initialization time, G = 100 (5)
T = 25 °C
60
µs
-40 °C < T< 125 °C
100
Notes:
(1)See Section 5.5: "Input offset voltage drift over temperature". Input offset measurements are performed on x100 gain
configuration. The amplifiers and the gain setting resistors are at the same temperature.
(2)Guaranteed by design
(3)Tested on the MiniSO8 package, RF injection on the IN- pin
(4)Slew rate value is calculated as the average between positive and negative slew rates
(5)Initialization time is defined as the delay between the moment when supply voltage exceeds 2.2 V and output voltage
stabilization



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