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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSZ182IST датащи(PDF) 8 Page - STMicroelectronics |
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TSZ182IST датащи(HTML) 8 Page - STMicroelectronics |
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8 / 39 page  Electrical characteristics TSZ182 8/39 DocID029836 Rev 1 Symbol Parameter Conditions Min. Typ. Max. Unit en Equivalent input noise voltage density f = 1 kHz 40 nV/√Hz f = 10 kHz 40 en-pp Voltage noise f = 0.1 to 10 Hz 0.5 µVpp Cs Channel separation f = 1 kHz 120 dB tinit Initialization time, G = 100 (4) T = 25 °C 60 µs -40 °C < T< 125 °C 100 Notes: (1)See Section 5.5: "Input offset voltage drift over temperature". Input offset measurements are performed on x100 gain configuration. The amplifiers and the gain setting resistors are at the same temperature. (2)Guaranteed by design. (3)Slew rate value is calculated as the average between positive and negative slew rates. (4)Initialization time is defined as the delay between the moment when supply voltage exceeds 2.2 V and output voltage stabilization |
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