HT45F5Q datasheet(32/114 Pages) HOLTEK

32 / 114 page

Rev. 1.10

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Rev. 1.10

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HT45F5Q

Charger Flash MCU

HT45F5Q

Charger Flash MCU

Programming Considerations

CaremustbetakenthatdataisnotinadvertentlywrittentotheEEPROM.ProtectioncanbePeriodic

byensuringthattheWriteEnablebitisnormallyclearedtozerowhennotwriting.AlsotheBank

PointercouldbenormallyclearedtozeroasthiswouldinhibitaccesstoBank1wheretheEEPROM

controlregisterexist.Althoughcertainlynotnecessary,considerationmightbegiveninthe

applicationprogramtothecheckingofthevalidityofnewwritedatabyasimplereadbackprocess.

WhenwritingdatatheWRbitmustbesethighimmediatelyaftertheWRENbithasbeensethigh,

toensurethewritecycleexecutescorrectly.TheglobalinterruptbitEMIshouldalsobecleared

beforeawritecycleisexecutedandthenre-enabledafterthewritecyclestarts.Notethatthedevice

shouldnotentertheIDLEorSLEEPmodeuntiltheEEPROMreadorwriteoperationistotally

complete.Otherwise,theEEPROMreadorwriteoperationwillfail.

Programming Examples

• Reading data from the EEPROM – polling method

MOV A, EEPROM_ADRES

; user defined address

MOV EEA, A

MOV A, 040H

; setup memory pointer MP1

MOV MP1, A

; MP1 points to EEC register

MOV A, 01H

; setup Bank Pointer

MOV BP, A

SET IAR1.1

; set RDEN bit, enable read operations

SET IAR1.0

; start Read Cycle - set RD bit

BACK:

SZ IAR1.0

; check for read cycle end

JMP BACK

CLR IAR1

; disable EEPROM write

CLR BP

MOV A, EED

; move read data to register

MOV READ_DATA, A

• Writing Data to the EEPROM – polling method

MOV A, EEPROM_ADRES

; user defined address

MOV EEA, A

MOV A, EEPROM_DATA

; user defined data

MOV EED, A

MOV A, 040H

; setup memory pointer MP1

MOV MP1, A

; MP1 points to EEC register

MOV A, 01H

; setup Bank Pointer

MOV BP, A

CLR EMI

SET IAR1.3

; set WREN bit, enable write operations

SET IAR1.2

; start Write Cycle - set WR bit– executed immediately after

; set WREN bit

SET EMI

BACK:

SZ IAR1.2

; check for write cycle end

JMP BACK

CLR IAR1

; disable EEPROM write

CLR BP

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