ACE1358B datasheet(1/7 Pages) ACE

номер детали	ACE1358B

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

PDF	7 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE1358B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.1

1

Description

The ACE1358B uses advanced trench technology to provide excellent RDS, low gate charge and

operation with gate voltages as low as 2.5V.

-RoHS Compliant

-Halogen Free

Features



VDS (V) = 20V,ID = 2A



RDS(ON)<50mΩ @ VGS= 4.5V



RDS(ON)<80mΩ @ VGS= 2.5V



TSOT-23-3 Package

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)

TA=25℃

ID

2

A

TA=70℃

1.5

Drain Current (Pulsed)

IDM

8

A

Power Dissipation

TA=25℃

PD

0.8

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

Packaging Type

TSOT-23-3

Ordering information

ACE1358B XXX + H

BMS: TSOT-23-3

Pb - free

Halogen - free

Аналогичный номер детали - ACE1358B

производитель	номер детали	датащи	подробное описание детали
ACE Technology Co., LTD...	ACE1357B	741Kb / 6P	P-Channel Enhancement Mode Field Effect Transistor VER 1.1
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