ACE1358B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.1

2

Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

20

V

Zero gate voltage drain current

1

µA

Gate threshold voltage

0.5

0.75

1.1

V

Gate leakage current

±100

nA

Drain-source on-state resistance

36

50

mΩ

46

80

Forward trans conductance

6

S

Diode forward voltage

0.75

1.0

V

Switching

Total gate charge

Qg

2.4

nC

Gate-source charge

Qgs

0.3

Gate-drain charge

Qgd

0.8

Turn-on delay time

2.1

ns

Turn-on rise time

Tr

3.6

Turn-off delay time

23.3

Turn-off fall time

Tf

4.5

Dynamic

Input capacitance

Ciss

240

pF

Output capacitance

Coss

40

Reverse transfer capacitance

Crss

22

Notes:

1.

Pulse width limited by maximum junction temperature.

2.

Pulse test: PW≤300μ s, duty cycle≤2%.

3.

For design AID only, not subject to production testing.

4.

Switching time is essentially independent of operating temperature.