STG3820BJR datasheet(8/20 Pages) STMICROELECTRONICS

номер детали	STG3820BJR

подробное описание детали	Low voltage high bandwidth quad DPDT switch

PDF	20 Pages

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Electrical characteristics

STG3820

8/20

DocID15992 Rev 4

RFLAT

ON resistance

flatness(2)

1.8

VS = 0 V to

0.4 V

IS = 8 mA



4.5





Ω

1.8

VS = 0 V to VCC

IS = 8 mA



9.5





2.7



2.2





3.0



1.8





3.7



1.6





4.3



1.6





IOFF

OFF state

leakage current

(Sn), (D)

4.3

VS = 0.3 or 4 V

-20



-100

100

IIN

Input leakage

current

0 to 4.3

VSEL = 0 to

4.3 V

-0.2



0.2

-1.0

1.0

µA

ICC

Quiescent supply

current

1.65 to 4.3

VSEL = VCC or

GND

-0.2



0.2

-1.0

1.0

µA

ICCLV

Quiescent supply

current for low

voltage driving(3)

4.3

VSEL = 1.65 V



±37

±50



±100

µA

VSEL = 1.80 V



±33

±40



±50

VSEL = 2.60 V



±11

±20



±30

RON = max. |mSN - nSN|, where m = 1 to 8 and n = 1 to 8, N = 1, 2.

2. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the

specified analog signal ranges.

3. Measurement is for one SEL pin.

Table 6. DC specifications (continued)

Symbol

Parameter

VCC (V)

Test

conditions

Value

Unit

TA = 25 °C

-40 to 85 °C

Min.

Typ.

Max.

Min.

Max.

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