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STD4NC50 датащи(PDF) 3 Page - STMicroelectronics

номер детали STD4NC50
подробное описание детали  N-CHANNEL 500V - 1.3Ω- 3.7A DPAK/IPAK PowerMesh?줚I MOSFET
PDF  9 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD4NC50 датащи(HTML) 3 Page - STMicroelectronics

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STD4NC50/-1
Thermal Impedence
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 250V, ID = 1.9 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
11.5
ns
tr
Rise Time
9
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID = 3.7 A,
VGS = 10V
18
6
8
25
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 400V, ID = 3.7 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
7
6
13
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
3.7
A
ISDM (2)
Source-drain Current (pulsed)
14.8
A
VSD (1)
Forward On Voltage
ISD = 3.7A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3.7A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
380
2.3
12
ns
µC
A
Safe Operating Area



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