STD4NC50_07 datasheet(1/9 Pages) STMICROELECTRONICS

номер детали	STD4NC50

подробное описание детали	N-CHANNEL 500V - 1.3Ω- 3.7A DPAK/IPAK PowerMesh?줚I MOSFET

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August 2001

STD4NC50

STD4NC50-1

N-CHANNEL 500V - 1.3

Ω - 3.7A DPAK/IPAK

PowerMesh™II MOSFET

s

TYPICAL RDS(on) = 1.3Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

SWITH MODE LOW POWER SUPPLIES

(SMPS)

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVES

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STD4NC50

STD4NC50-1

500V

<1.5

Ω

<1.5

Ω

3.7A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

3.7

A

ID

Drain Current (continuos) at TC = 100°C

2.3

A

IDM (*)

Drain Current (pulsed)

14.8

A

PTOT

Total Dissipation at TC = 25°C

50

W

Derating Factor

0.4

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤3.7A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

DPAK

(NO SUFFIX)

IPAK

(SUFFIX“-1”)

1

3

2

1

INTERNAL SCHEMATIC DIAGRAM

Аналогичный номер детали - STD4NC50_07

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STD4NC50	85Kb / 8P	N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET Sep-1999

More results

Аналогичное описание - STD4NC50_07

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB8NC50	441Kb / 9P	N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh™ I MOSFET Nov-2001
	STD1HNC60	268Kb / 9P	N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh™ I MOSFET Feb-2001
	STD1LNC60	274Kb / 9P	N-CHANNEL 600V - 12ohm - 1A - IPAK/DPAK PowerMESH™ I MOSFET Feb-2001
	STD1NC60	280Kb / 9P	N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh™ I MOSFET Dec-2000
	STD2NB50	451Kb / 10P	N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh™ MOSFET Sep-2001
	STD2NC50	442Kb / 10P	N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh™ II MOSFET May-2001
	STD2NC60	283Kb / 9P	N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMesh™ II MOSFET Jan-2001
	STD3NB50	75Kb / 6P	N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET May-1998
	STD3NC60	460Kb / 10P	N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh™ I MOSFET Aug-2002
	STD6NC40	272Kb / 9P	N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh™ I MOSFET Mar-2001

More results

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Аналогичный номер детали - STD4NC50_07

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