SSM3K15FS datasheet(2/5 Pages) TOSHIBA

2 / 5 page

SSM3K15FS

2001-12-04

Electrical Characteristics (Ta

==== 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0

±1

Drain-Source breakdown voltage

V (BR) DSS

ID = 0.1 mA, VGS = 0

Drain Cut-off current

IDSS

VDS = 30 V, VGS = 0

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.8

1.5

Forward transfer admittance

|Yfs|

VDS = 3 V, ID = 10 mA

ID = 10 mA, VGS = 4 V

2.2

4.0

Drain-Source ON resistance

RDS (ON)

ID = 10 mA, VGS = 2.5 V

4.0

7.0

Input capacitance

Ciss

VDS = 3 V, VGS = 0, f = 1 MHz

7.8

Reverse transfer capacitance

Crss

VDS = 3 V, VGS = 0, f = 1 MHz

3.6

Output capacitance

Coss

VDS = 3 V, VGS = 0, f = 1 MHz

8.8

Turn-on time

ton

Switching time

Turn-off time

toff

VDD = 5 V, ID = 10 mA,

VGS = 0~5 V

180

Switching Time Test Circuit

(a) Test circuit

(b) VIN

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for

this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires

lower voltage than Vth.

(relationship can be established as follows: VGS (off) < Vth < VGS (on) )

Please take this into consideration for using the device.

VGS recommended voltage of 2.5 V or higher to turn on this product.

VDD = 5 V

D.U. <= 1%

VIN: tr, tf < 5 ns

(Zout = 50 W)

Common source

= 25°C

VDD

OUT

5 V

ton

90%

10%

0 V

5 V

10%

90%

toff

VDD

VDS (ON)

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