SSM3K15FS

2001-12-04

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K15FS

High Speed Switching Applications

Analog Switching Applications

· Compact package suitable for high-density mounting

· Low ON-resistance

==== 25°C)

Characteristic

Symbol

Rating

Unit

Drain-Source voltage

30

V

Gate-Source voltage

±20

V

DC

100

Drain current

Pulse

200

mA

Drain power dissipation (Ta

= 25°C)

100

mW

Channel temperature

150

°C

Storage temperature range

-55~150

°C

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the

environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and

containers and other objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2H1B

Weight: 2.4 mg (typ.)

D P

1

2

3

12

3