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AN708 датащи(PDF) 4 Page - Vishay Siliconix |
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AN708 датащи(HTML) 4 Page - Vishay Siliconix |
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4 / 7 page ![]() AN708 Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70581 VP = (5.0 V + 0.4 V)(45 T/3 T) = 81 Therefore, VDS(off) = VIN(max) + VP = 368 V + 81 V = 449 V. A 600 V MOSFET allows for a 150 V spike due to leakage inductance at high line. The RC snubber was sized empirically to keep the peak drain voltage below 600 V. The SMP4N60 is the smallest 600-V device available. At 25 _C the rDS(on) is 2.0 W. At 100_C, rDS(on) = 1.75 x 2 W = 3.5 W. The peak drain current was previously calculated at 0.634 A. The maximum RMS drain current is given by I RMS + Ipk D 3 1 2 + 0.634A 0.5 3 + 0.26 A On-state losses are given by Pon = IRMS2 x rDS(on) = (0.26 A)2 x 3.5 W = 237 mW. Switching losses are estimated at 350 mW. Since the thermal resistance is specified at 80 _C/W, a total temperature rise of 47 _C is expected. This permits operation up to approximately 50 _C ambient temperature, while holding the maximum junction temperature to 100 _C. Something of more concern for universal-input than for a single-input voltage supply is the range of duty factor to be expected. Since the on time varies inversely with input voltage, the high-line on-time can become quite small in a high-frequency converter. For this kind of application, try to keep the minimum on time to not much less than 1 ms. This will help minimize noise problems with the current sense. Also, be sure to use a non-inductive resistor for the current sense (carbon composition or film type). Use of a wire-wound resistor will produce large spikes which have to be filtered out. The dual-delay current-limit comparators of the Si9120 will frequently eliminate the need for a current-sense filter altogether. The magnitude of the noise on the current sense voltage will be affected by transformer parasitic capacitances and PCB layout. As such, every design will exhibit slightly different characteristics. Careful attention to detail in the magnetics design and construction as well as the board layout is a must. For designs using current-sense resistors in the power MOSFET’s source leg, note that the gate drive current is “seen” by the sense resistor. In very low-power designs, this can easily exceed the full load sense voltage causing severe noise problems. Adding a fairly large-value gate resistor will help in this case. Also, an RC current-sense filter becomes much more important. FOLDBACK CIRCUIT Foldback current limiting is provided by Q3 and its associated components. Under normal operating conditions, diode D6 keeps C13 charged to VCC. Hence, Q3 is biased off. In the event of a short circuit on any output, all winding voltages are clamped low. This causes the voltage on C13 to drop to a level set by divider R10 and R11. VCC is held at 8.6 V by the Si9120’s start-up regulator. The current set by the value of R12 flows through Q3 and R3, and causes the voltage on pin 4 to rise. Since a peak threshold of 1.2 V is internally set on pin 4, the voltage required across R5 to terminate a pulse is reduced by an amount equal to the drop on R3. ID = {1.2 - (IQ3)(R3)}/R5. Thus as IQ3 increases, ID decreases. See Figure 2a for foldback operating waveforms. The foldback circuit will not perform correctly without the spike blanking circuit. The leakage spike will peak charge C13 even with a shorted load. However, the foldback function is completely optional and all associated components can be eliminated if a lower cost supply is desired. TEST RESULTS Data compiled on the test circuit appear in Table 1. Combined line and load regulation measures "2.7%, well within a "5% specification. Measured efficiency is 73.4% with no effort at optimization. A detailed loss assessment could, no doubt, offer some improvements. Pulse load tests show reasonable transient response, and phase margin is measured at 60 degrees. For details on how to close the feedback loop, refer to Vishay Siliconix application notes AN713 and AN707. All data taken with dc input source to ensure stable readings. TABLE 1. UNIVERSALINPUT SUPPLY TEST DATA Full Load: VIN (dc) Iin (mA) +5 V +12 V –12 V 100 V 143.9 4.974 12.64 12.50 200 V 72.3 5.014 12.76 12.61 300 V 48.9 5.027 12.79 12.65 385 V 39.4 5.049 12.81 12.67 Half Load: 100 V 78.0 5.153 12.99 12.83 200 V 40.3 5.205 13.10 12.96 300 V 27.9 5.235 13.12 12.97 385 V 23.0 5.254 13.14 13.01 PKPK OUTPUT RIPPLE VOLTAGES (SPIKES NOT INCLUDED) 5 V +12 V –12 V 60 mV 45 mV 40 mV Note: Worst case over full line-voltage range. |
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