PCF5079 datasheet(13/28 Pages) PHILIPS

номер детали	PCF5079

подробное описание детали	Dual-band power amplifier controller for GSM, PCN and DCS

PDF	28 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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13 / 28 page

2001 Nov 21

Philips Semiconductors

Product speciﬁcation

Dual-band power ampliﬁer controller for

GSM, PCN and DCS

PCF5079

11 OPERATING CHARACTERISTICS

VDD = 2.5 to 5 V; Tamb = −40 to +85 °C; unless otherwise speciﬁed.

Notes

1. Guaranteed by design.

2. Slew rates are measured between 10% and 90% of output voltage interval with a load of 40 pF to ground.

SYMBOL

PARAMETER

CONDITION

MIN.

TYP.

MAX.

UNIT

Integrator (OP4G and OP4D)

VDD

supply voltage

2.5

3.6

5.0

gain bandwidth

CL = 120 pF; note 1

−

MHz

PSRR

power supply ripple rejection

f = 217 Hz; VDD = 3 V; note 1 50

−

SRpos

positive slew rate

VDD = 3 V; note 2

2.0

3.2

−

µs

SRneg

negative slew rate

VDD = 3 V; note 2

2.0

3.2

−

µs

VO(min)

minimum output voltage

Tamb = 25 °C; see Fig.7

−−

0.2

VO(max)

maximum output voltage

RL = 350 Ω; see Fig.8

0.85VDD −−

Capacitors C1, C2 and C4

matching ratio accuracy

between C1, C2 and C4

−

Low-pass ﬁlter for DAC signal (3rd-order Bessel ﬁlter)

f3dB

corner frequency

100

130

kHz

td(group)

group delay time

see Fig.11

1.8

3.0

4.2

µs

handbook, halfpage

2.5

3.5

4.5

VDD (V)

MGT333

0.258

0.250

0.256

0.254

0.252

(mV/K)

Fig.7

Temperature coefficient of VO(min) as a

function of VDD.

handbook, halfpage

2.5

3.5

4.5

VDD (V)

(mA)

MGT334

Fig.8 Minimum load current as a function of VDD.

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