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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AS6C8016 датащи(PDF) 1 Page - Alliance Semiconductor Corporation |
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AS6C8016 датащи(HTML) 1 Page - Alliance Semiconductor Corporation |
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1 / 12 page  FEATURES Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 6µA (TYP.) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C8016 is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8016 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby(ISB1,TYP.) Operating(Icc,TYP.) AS6C8016(I) -40 ~ 85℃ 2.7 ~ 5.5V 55ns 6µA(LL) 30mA FUNCTIONAL BLOCK DIAGRAM CONTROL CIRCUIT CE# WE# OE# DECODER 512Kx16 MEMORY ARRAY COLUMN I/O A0-A18 Vcc Vss DQ8-DQ15 Upper Byte DQ0-DQ7 Lower Byte I/O DATA CIRCUIT LB# UB# PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ15 Data Inputs/Outputs CE# Chip Enable Input WE# Write Enable Input OE# Output Enable Input LB# Lower Byte Control UB# Upper Byte Control VCC Power Supply VSS Ground 512KX 8 BIT LOW POWER CMOS SRAM January 2007 NOVEMBER 2007 NOVEMBER/2007, V 1.0 Alliance Memory Inc. Page 1 of 12 AS6C8016 512K X 16 BIT SUPER LOW POWER CMOS SRAM |
Аналогичный номер детали - AS6C8016 |
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Аналогичное описание - AS6C8016 |
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