MDP1933TH datasheet(2/6 Pages) MGCHIP

2 / 6 page

Sep. 2015. Version 1.1

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDP1933TH

-55~150

TO-220

Tube

Halogen Free

Electrical Characteristics (TJ =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.0

4.0

Drain Cut-Off Current

IDSS

VDS = 64V, VGS = 0V

1.0

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 50A

5.5

7.0

Ω

Forward Transconductance

gfs

VDS = 10V, ID = 50A

Dynamic Characteristics

Total Gate Charge

VDS = 40V, ID = 50A,

VGS = 10V

59.4

Gate-Source Charge

Qgs

16.5

Gate-Drain Charge

Qgd

12.3

Input Capacitance

Ciss

VDS = 40V, VGS = 0V,

f = 1.0MHz

3,841

Reverse Transfer Capacitance

Crss

34.2

Output Capacitance

Coss

651.7

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 40V,

ID = 50A , RG = 3.0Ω

15.6

Rise Time

32.7

Turn-Off Delay Time

td(off)

24.2

Fall Time

15.1

Gate Resistance

f=1 MHz

2.5

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 50A, VGS = 0V

0.9

1.2

Body Diode Reverse Recovery Time

trr

IF = 50A, dl/dt = 100A/μs

64.3

Body Diode Reverse Recovery Charge

Qrr

152.7

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited

2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 17.0A, VGS = 10V.

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