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MDP1933TH датащи(PDF) 1 Page - MagnaChip Semiconductor. |
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MDP1933TH датащи(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 6 page ![]() Sep. 2015. Version 1.1 MagnaChip Semiconductor Ltd. 1 Absolute Maximum Ratings (Ta = 25 oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (1) TC=25 oC (Silicon Limited) ID 105 A TC=25 oC (Package Limited) 120 TC=100 oC 67 Pulsed Drain Current IDM 420 Power Dissipation TC=25 oC PD 157 W TC=100 oC 63 Single Pulse Avalanche Energy (2) EAS 144.5 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) RθJA 62.5 oC/W Thermal Resistance, Junction-to-Case RθJC 0.8 MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0m Ω Features VDS = 80V ID = 105A @VGS = 10V RDS(ON) < 7.0 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested General Description The MDP1933 uses advanced MagnaChip ’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1933 is suitable device for Synchronous Rectification For Server and general purpose applications. TO-220 D G S |
Аналогичный номер детали - MDP1933TH |
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Аналогичное описание - MDP1933TH |
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