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MDP1921 датащи(PDF) 3 Page - MagnaChip Semiconductor.

номер детали MDP1921
подробное описание детали  Single N-channel Trench MOSFET 100V, 120A, 4.5m(ohm)
PDF  6 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDP1921 датащи(HTML) 3 Page - MagnaChip Semiconductor.

  MDP1921 Datasheet HTML 1Page - MagnaChip Semiconductor. MDP1921 Datasheet HTML 2Page - MagnaChip Semiconductor. MDP1921 Datasheet HTML 3Page - MagnaChip Semiconductor. MDP1921 Datasheet HTML 4Page - MagnaChip Semiconductor. MDP1921 Datasheet HTML 5Page - MagnaChip Semiconductor. MDP1921 Datasheet HTML 6Page - MagnaChip Semiconductor.  
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Jun. 2013. Version 1.2
MagnaChip Semiconductor Ltd.
3
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
90
100
V
GS, Gate-Source Voltage [V]
T
A=25
℃
※ Notes :
V
DS = 10V
0.0
0.3
0.6
0.9
1.2
1.5
1
10
100
T
A=25
℃
※ Notes :
V
GS = 0V
V
SD, Source-Drain voltage [V]
0
1
2
3
4
5
0
20
40
60
80
100
120
140
160
180
200
7.0V
8.0V
4.5V
6.0V
V
GS = 10V
5.0V
4.0V
V
DS, Drain-Source Voltage [V]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
※ Notes :
1. V
GS = 10 V
2. I
D = 50 A
T
J, Junction Temperature [
oC]
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
※ Notes :
I
D = 50A
T
A = 25
℃
V
GS, Gate to Source Volatge [V]
0
50
100
150
200
3.5
3.6
3.7
3.8
3.9
4.0
4.1
V
GS = 10V
I
D, Drain Current [A]



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