| поискавой системы для электроныых деталей |
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MDP1921 датащи(PDF) 1 Page - MagnaChip Semiconductor. |
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MDP1921 датащи(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 6 page ![]() Jun. 2013. Version 1.2 MagnaChip Semiconductor Ltd. 1 Absolute Maximum Ratings (Ta = 25 oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (1) TC=25 oC (Silicon Limited) ID 153 A TC=25 oC (Package Limited) 120 TC=100 oC 97 Pulsed Drain Current IDM 480 Power Dissipation TC=25 oC PD 223 W TC=100 oC 89 Single Pulse Avalanche Energy (2) EAS 609 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) RθJA 62.5 oC/W Thermal Resistance, Junction-to-Case RθJC 0.56 MDP1921 Single N-channel Trench MOSFET 100V, 120A, 4.5m Ω Features VDS = 100V ID = 120A @VGS = 10V RDS(ON) < 4.5 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested General Description The MDP1921 uses advanced MagnaChip ’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1921 is suitable device for DC/DC Converter and general purpose applications. TO-220 D G S |
Аналогичный номер детали - MDP1921 |
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Аналогичное описание - MDP1921 |
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