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MDP1901TH датащи(PDF) 4 Page - MagnaChip Semiconductor.

номер детали MDP1901TH
подробное описание детали  Single N-channel Trench MOSFET 100V, 36A, 22m(ohm)
PDF  6 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDP1901TH датащи(HTML) 4 Page - MagnaChip Semiconductor.

  MDP1901TH Datasheet HTML 1Page - MagnaChip Semiconductor. MDP1901TH Datasheet HTML 2Page - MagnaChip Semiconductor. MDP1901TH Datasheet HTML 3Page - MagnaChip Semiconductor. MDP1901TH Datasheet HTML 4Page - MagnaChip Semiconductor. MDP1901TH Datasheet HTML 5Page - MagnaChip Semiconductor. MDP1901TH Datasheet HTML 6Page - MagnaChip Semiconductor.  
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August. 2010. Version 1.2
MagnaChip Semiconductor Ltd.
4
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
10
1
0.01
※ Notes :
Duty Factor, D=t
1/t2
PEAK T
J = PDM * Z
θ Ja* Rθ Ja(t) + Ta
R
Θ JC=2.3℃
/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
t
1, Rectangular Pulse Duration [sec]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
0
5
10
15
20
25
30
35
40
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
* Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS [V]
25
50
75
100
125
150
0
10
20
30
40
T
C [
℃
]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
100us
100ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
Single Pulse
R
θ jC=2.3℃
/W
T
a=25
℃
V
DS [V]
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
9
10
* Note ; I
D = 20A
Q
g [nC]



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