MDP1901TH datasheet(2/6 Pages) MGCHIP

2 / 6 page

August. 2010. Version 1.2

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

Rohs Status

MDP1901TH

-55~150

TO-220

Tube

Halogen Free

Electrical Characteristics (Tc =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

100

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.0

2.8

4.0

Drain Cut-Off Current

IDSS

VDS = 80V, VGS = 0V

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 35A

mΩ

TJ=125

VGS = 6.0V, ID = 20A

Forward Transconductance

gfs

VDS = 5V, ID = 35A

Dynamic Characteristics

Total Gate Charge

VDS = 50V, ID = 20A,

VGS = 10V

110

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

Ciss

VDS = 30V, VGS = 0V,

f = 1.0MHz

3045

Reverse Transfer Capacitance

Crss

160

Output Capacitance

Coss

234

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

0.81

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 50V,

RL = 30Ω, RG = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

120

Fall Time

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 1A, VGS = 0V

0.7

1.2

Body Diode Reverse Recovery Time

trr

IF = 20A, dl/dt = 100A/μs

100

Body Diode Reverse Recovery Charge

Qrr

240

Note :

Surface mounted RF4 board with 2oz. Copper.

Starting TJ=25°C, L=1mH, IAS=20A, VDD=50V, VGS=10V

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