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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AS6C2008A датащи(PDF) 1 Page - Alliance Semiconductor Corporation |
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AS6C2008A датащи(HTML) 1 Page - Alliance Semiconductor Corporation |
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1 / 15 page  FEATURES Fast access time : 55ns Low power consumption: Operating current : 20/18mA (TYP.) Standby current : 2µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 2.0V (MIN.) Lead free and green package available Package : 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 32-pin 450 mil SOP 32-pin 600 mil P-DIP 36-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C2008A is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C2008A is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2008A operates from a single power supply of 2.7V ~ 5.5V and all outputs are fully TTL compatible PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby(ISB1,TYP.) Operating(Icc,TYP.) AS6C2008A(LLI) -40 ~ 85℃ 2.7 ~ 5.5V 55ns 2µA(LL) 20/18mA FUNCTIONAL BLOCK DIAGRAM DECODER I/O DATA CIRCUIT CONTROL CIRCUIT 256Kx8 MEMORY ARRAY COLUMN I/O A0-A17 Vcc Vss DQ0-DQ7 CE# WE# OE# CE2 PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A17 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE#, CE2 Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection 512K X 8 BIT LOW POWER CMOS SRAM January 2007 256K X 8 BIT LOW POWER CMOS SRAM AUGUST 2007 AS6C2008A AUGUST/2007, V 1.0 Alliance Memory Inc. Page 1 of 15 |
Аналогичный номер детали - AS6C2008A |
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Аналогичное описание - AS6C2008A |
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