MDP06N033TH datasheet(2/6 Pages) MGCHIP

2 / 6 page

Jun. 2015. Rev. 1.0

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDP06N033TH

-55~150

TO-220

Tube

Halogen Free

Electrical Characteristics (TJ =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.0

4.0

Drain Cut-Off Current

IDSS

VDS = 48V, VGS = 0V

1.0

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 50A

2.7

3.3

Ω

Forward Transconductance

gfs

VDS = 10V, ID = 50A

100

Dynamic Characteristics

Total Gate Charge

VDS = 30V, ID = 50A,

VGS = 10V

83.5

Gate-Source Charge

Qgs

25.6

Gate-Drain Charge

Qgd

22.9

Input Capacitance

Ciss

VDS = 30V, VGS = 0V,

f = 1.0MHz

5,236.0

Reverse Transfer Capacitance

Crss

77.6

Output Capacitance

Coss

1,033.0

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 30V,

ID = 50A , RG = 3.0Ω

39.0

Rise Time

26.3

Turn-Off Delay Time

td(off)

89.0

Fall Time

50.5

Gate Resistance

f=1 MHz

3.0

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 50A, VGS = 0V

0.80

1.2

Body Diode Reverse Recovery Time

trr

IF = 50A, dl/dt = 100A/μs

66.0

Body Diode Reverse Recovery Charge

Qrr

97.7

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited

2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 24.0A, VGS = 10V.

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