MDP06N033TH datasheet(1/6 Pages) MGCHIP

номер детали	MDP06N033TH

подробное описание детали	Single N-channel Trench MOSFET 60V, 120A, 3.3m(ohm)

PDF	6 Pages

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производитель	MGCHIP [MagnaChip Semiconductor.]

домашняя страница	http://www.magnachip.co.kr

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1 / 6 page

Jun. 2015. Rev. 1.0

MagnaChip Semiconductor Ltd.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(1)

TC=25

oC (Silicon Limited)

ID

159.8

A

TC=25

oC (Package Limited)

120.0

TC=100

oC

101.1

Pulsed Drain Current

IDM

480

Power Dissipation

TC=25

oC

PD

138.9

W

TC=100

oC

55.6

Single Pulse Avalanche Energy

EAS

288

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

RθJC

0.9

MDP06N033

Single N-channel Trench MOSFET 60V, 120A, 3.3m

Ω

Features



VDS = 60V



ID = 120A @VGS = 10V



RDS(ON)

< 3.3

mΩ @VGS = 10V



100% UIL Tested



100% Rg Tested

General Description

The MDP06N033 uses advanced MagnaChip

’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDP06N033 is suitable device for Synchronous

Rectification for Server / Adapter and general purpose

applications.

TO-220

D

G

S

Аналогичный номер детали - MDP06N033TH

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Inchange Semiconductor ...	MDP06N033TH	332Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - MDP06N033TH

производитель	номер детали	датащи	подробное описание детали
MagnaChip Semiconductor...	MDE1932	1Mb / 6P	Single N-channel Trench MOSFET 80V, 120A, 3.4m(ohm)
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	MDP1930	1Mb / 6P	Single N-channel Trench MOSFET 80V, 120A, 2.5m(ohm)
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MDP06N033TH датащи(PDF) 1 Page - MagnaChip Semiconductor.

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Аналогичный номер детали - MDP06N033TH

Аналогичное описание - MDP06N033TH

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