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MDHT4N25 датащи(PDF) 4 Page - MagnaChip Semiconductor.

номер детали MDHT4N25
подробное описание детали  N-Channel MOSFET 250V, 0.83A, 1.75(ohm)
PDF  7 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDHT4N25 датащи(HTML) 4 Page - MagnaChip Semiconductor.

  MDHT4N25 Datasheet HTML 1Page - MagnaChip Semiconductor. MDHT4N25 Datasheet HTML 2Page - MagnaChip Semiconductor. MDHT4N25 Datasheet HTML 3Page - MagnaChip Semiconductor. MDHT4N25 Datasheet HTML 4Page - MagnaChip Semiconductor. MDHT4N25 Datasheet HTML 5Page - MagnaChip Semiconductor. MDHT4N25 Datasheet HTML 6Page - MagnaChip Semiconductor. MDHT4N25 Datasheet HTML 7Page - MagnaChip Semiconductor.  
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Mar. 2016 Version 1.1
MagnaChip Semiconductor Ltd.
4
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Transient Thermal Response Curve
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10s
1s
100 s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
Single Pulse
T
J=Max rated
T
C=25
℃
V
DS, Drain-Source Voltage [V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
※ Notes :
Duty Factor, D=t
1/t2
PEAK T
J = PDM * Z
θ JC* Rθ JC(t) + TC
R
Θ JA=50℃/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Rectangular Pulse Duration [sec]
0
1
2
3
4
5
0
2
4
6
8
10
50V
125V
200V
※ Note : I
D = 3.6A
Q
G, Total Gate Charge [nC]
1E-4
1E-3
0.01
0.1
1
10
0
100
200
300
400
500
600
700
800
single Pulse
R
thJA = 50
℃/W
T
C = 25
℃
Pulse Width (s)
Fig.11 Single Pulse Maximum Power
Dissipation
Fig.12 Maximum Drain Current vs. Case
Temperature
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
T
C, Case Temperature [
℃]
1
10
0
200
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]



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