MDHT4N25 datasheet(3/7 Pages) MGCHIP

номер детали	MDHT4N25

подробное описание детали	N-Channel MOSFET 250V, 0.83A, 1.75(ohm)

PDF	7 Pages

Scroll/Zoom	100%

производитель	MGCHIP [MagnaChip Semiconductor.]

домашняя страница	http://www.magnachip.co.kr

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3 / 7 page

Mar. 2016 Version 1.1

MagnaChip Semiconductor Ltd.

Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with

Temperature

Fig.4 Breakdown Voltage Variation vs.

Temperature

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

9 10 11 12 13 14 15 16 17 18 19 20

Notes

1. 250㎲ Pulse Test

2. T

C=25

℃

gs=5.5V

=6.0V

=6.5V

=7.0V

=8.0V

=10V

=15V

DS,Drain-Source Voltage [V]

-50

100

150

0.8

0.9

1.0

1.1

1.2

※ Notes :

1. V

GS = 0 V

2. I

= 250㎂

J, Junction Temperature [

oC]

GS=20V

GS=10V

D,Drain Current [A]

0.1

-55℃

25℃

150℃

* Notes ;

1. Vds=30V

GS [V]

0.2

0.4

0.6

0.8

1.0

1.2

0.1

25℃

150℃

※ Notes :

1. V

GS = 0 V

2.250s Pulse test

SD, Source-Drain Voltage [V]

-50

100

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS =

10 V

2. I

=0.415A

J, Junction Temperature [

oC]

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