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MDF1933TH датащи(PDF) 4 Page - MagnaChip Semiconductor.

номер детали MDF1933TH
подробное описание детали  Single N-channel Trench MOSFET 80V, 43A, 7.5m(ohm)
PDF  6 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDF1933TH датащи(HTML) 4 Page - MagnaChip Semiconductor.

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Nov. 2014. Rev 1.0
4
MagnaChip Semiconductor Ltd.
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response
Curve
25
50
75
100
125
150
0
10
20
30
40
50
T
C, Case Temperature [،ة]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
،ط Notes :
Duty Factor, D=t
1/t2
PEAK T
J = PDM * Z¥èJC * R¥èJC(t) + TC
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Rectangular Pulse Duration [sec]
0
5
10
15
20
25
30
35
40
0
1000
2000
3000
4000
5000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
0
10
20
30
40
50
60
0
2
4
6
8
10
V
DS = 40V
※ Note : I
D = 50A
Q
G, Total Gate Charge [nC]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
1 s
1 ms
100 ms
10 ms
DC
100 us
Operation in This Area
is Limited by R
DS(on)
Single Pulse
T
J=Max rated
T
C=25،ة
V
DS, Drain-Source Voltage [V]



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