MDF1933TH datasheet(1/6 Pages) MGCHIP

номер детали	MDF1933TH

подробное описание детали	Single N-channel Trench MOSFET 80V, 43A, 7.5m(ohm)

PDF	6 Pages

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производитель	MGCHIP [MagnaChip Semiconductor.]

домашняя страница	http://www.magnachip.co.kr

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1 / 6 page

Nov. 2014. Rev 1.0

1

MagnaChip Semiconductor Ltd.

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

80

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(1)

TC=25

oC (Silicon Limited)

ID

43

A

TC=100

oC

27

Pulsed Drain Current

IDM

173

Power Dissipation

TC=25

oC

PD

27.7

W

TC=100

oC

11.1

Single Pulse Avalanche Energy

(2)

EAS

144.5

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

RθJC

4.5

MDF1933

Single N-channel Trench MOSFET 80V, 43A, 7.5m

Ω

Features



VDS = 80V



ID = 43A @VGS = 10V



RDS(ON)

< 7.5

mΩ @VGS = 10V



100% UIL Tested

General Description

The MDF1933 uses advanced MagnaChip

’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDF1933 is suitable device for Synchronous

Rectification for Server / Adapter and general purpose

applications.

.

TO-220F

D

G

S

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Inchange Semiconductor ...	MDF1933TH	322Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - MDF1933TH

производитель	номер детали	датащи	подробное описание детали
SemiHow Co.,Ltd.	HRP80N08K	944Kb / 8P	80V N-Channel Trench MOSFET
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MDF1933TH датащи(PDF) 1 Page - MagnaChip Semiconductor.

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Аналогичный номер детали - MDF1933TH

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