MDF1723TH datasheet(2/6 Pages) MGCHIP

2 / 6 page

June. 2016. Version 1.0

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDF1723TH

-55~150

TO-220F

Tube

Halogen Free

Electrical Characteristics (TJ = 25

oC unless otherwise specified)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.0

4.0

Drain Cut-Off Current

IDSS

VDS = 32V, VGS = 0V

1.0

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 40A

2.2

2.6

Ω

Forward Transconductance

gfs

VDS = 10V, ID = 40A

111

Dynamic Characteristics

Total Gate Charge

VDS = 20V, ID = 40A,

VGS = 10V

88.3

Gate-Source Charge

Qgs

22.9

Gate-Drain Charge

Qgd

16.5

Input Capacitance

Ciss

VDS = 20V, VGS = 0V,

f = 1.0MHz

5755

Reverse Transfer Capacitance

Crss

203

Output Capacitance

Coss

1830

Turn-On Delay Time

td(on)

VGS = 10V, VDS =20V,

ID = 40A , RG = 3.0Ω

24.3

Rise Time

14.7

Turn-Off Delay Time

td(off)

84.8

Fall Time

42.7

Gate Resistance

f=1 MHz

3.0

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 40A, VGS = 0V

0.9

1.2

Body Diode Reverse Recovery Time

trr

IF = 40A, dl/dt = 100A/μs

55.7

Body Diode Reverse Recovery Charge

Qrr

82.0

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited

2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 18.0A, VGS = 10V.

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