MDF1723TH datasheet(1/6 Pages) MGCHIP

номер детали	MDF1723TH

подробное описание детали	Single N-channel Trench MOSFET 40V, 85A, 2.6m(ohm)

PDF	6 Pages

Scroll/Zoom	100%

производитель	MGCHIP [MagnaChip Semiconductor.]

домашняя страница	http://www.magnachip.co.kr

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1 / 6 page

June. 2016. Version 1.0

MagnaChip Semiconductor Ltd.

1

Absolute Maximum Ratings

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(1)

TC=25

oC (Silicon Limited)

ID

85.0

A

TC=100

oC

56.9

Pulsed Drain Current

IDM

340

Power Dissipation

TC=25

oC

PD

34.8

W

TC=100

oC

13.9

Single Pulse Avalanche Energy

(2)

EAS

162.0

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

RθJC

3.6

MDF1723

Single N-channel Trench MOSFET 40V, 85A, 2.6m

Ω

Features



VDS = 40V



ID = 85A @VGS = 10V



RDS(ON)

< 2.6

mΩ @VGS = 10V



100% UIL Tested



100% Rg Tested

General Description

The MDF1723 uses advanced MagnaChip

’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDF1723 is suitable device for Synchronous

Rectification For Server and general purpose applications.

D

G

S

TO-220F

G

D

S

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Inchange Semiconductor ...	MDF1723TH	322Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - MDF1723TH

производитель	номер детали	датащи	подробное описание детали
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MDF1723TH датащи(PDF) 1 Page - MagnaChip Semiconductor.

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Аналогичный номер детали - MDF1723TH

Аналогичное описание - MDF1723TH

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