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STM32L431 датащи(PDF) 155 Page - STMicroelectronics |
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STM32L431 датащи(HTML) 155 Page - STMicroelectronics |
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155 / 200 page ![]() DocID028800 Rev 1 155/200 STM32L431xx Electrical characteristics 168 6.3.22 Temperature sensor characteristics 6.3.23 VBAT monitoring characteristics 6.3.24 Timer characteristics The parameters given in the following tables are guaranteed by design. Refer to Section 6.3.14: I/O port characteristics for details on the input/output alternate function characteristics (output compare, input capture, external clock, PWM output). Table 75. TS characteristics Symbol Parameter Min Typ Max Unit TL(1) VTS linearity with temperature - ±1 ±2 °C Avg_Slope(2) Average slope 2.3 2.5 2.7 mV/°C V30 Voltage at 30°C (±5 °C)(3) 0.742 0.76 0.785 V tSTART (TS_BUF)(1) Sensor Buffer Start-up time in continuous mode(4) -8 15 µs tSTART(1) Start-up time when entering in continuous mode(4) -70 120 µs tS_temp(1) ADC sampling time when reading the temperature 5 - - µs IDD(TS)(1) Temperature sensor consumption from VDD, when selected by ADC -4.7 7 µA 1. Guaranteed by design. 2. Guaranteed by characterization results. 3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to Table 7: Temperature sensor calibration values. 4. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes. Table 76. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -39 - kΩ QRatio on VBAT measurement - 3 - - Er(1) 1. Guaranteed by design. Error on Q -10 - 10 % tS_vbat(1) ADC sampling time when reading the VBAT 12 - - µs Table 77. VBAT charging characteristics Symbol Parameter Conditions Min Typ Max Unit RBC Battery charging resistor VBRS = 0 - 5 - kΩ VBRS = 1 - 1.5 - |
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