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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L162VE датащи(PDF) 83 Page - STMicroelectronics |
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STM32L162VE датащи(HTML) 83 Page - STMicroelectronics |
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83 / 129 page  DocID025882 Rev 6 83/129 STM32L162xE Electrical characteristics 111 Flash memory and data EEPROM Table 35. Flash memory and data EEPROM characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design. Unit VDD Operating voltage Read / Write / Erase -1.65 - 3.6 V tprog Programming/ erasing time for byte / word / double word / half-page Erasing - 3.28 3.94 ms Programming - 3.28 3.94 IDD Average current during the whole programming / erase operation TA = 25 °C, VDD = 3.6 V - 600 - µA Maximum current (peak) during the whole programming / erase operation -1.5 2.5 mA Table 36. Flash memory and data EEPROM endurance and retention Symbol Parameter Conditions Value Unit Min(1) 1. Guaranteed by characterization results. Typ Max NCYC(2) Cycling (erase / write) Program memory TA = -40°C to 105 °C 10 -- kcycles Cycling (erase / write) EEPROM data memory 300 -- tRET(2) 2. Characterization is done according to JEDEC JESD22-A117. Data retention (program memory) after 10 kcycles at TA = 85 °C TRET = +85 °C 30 - - years Data retention (EEPROM data memory) after 300 kcycles at TA = 85 °C 30 - - Data retention (program memory) after 10 kcycles at TA = 105 °C TRET = +105 °C 10 - - Data retention (EEPROM data memory) after 300 kcycles at TA = 105 °C 10 - - |
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