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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L162VE датащи(PDF) 71 Page - STMicroelectronics |
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STM32L162VE датащи(HTML) 71 Page - STMicroelectronics |
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71 / 129 page  DocID025882 Rev 6 71/129 STM32L162xE Electrical characteristics 111 APB2 SYSCFG & RI 2.9 2.4 2.0 2.4 µA/MHz (fHCLK) TIM9 8.2 6.9 5.5 6.9 TIM10 6.2 5.1 4.1 5.1 TIM11 6.2 5.1 4.1 5.1 ADC(2) 9.5 7.9 6.2 7.9 SPI1 4.8 3.9 3.2 3.9 USART1 8.2 6.9 5.4 6.9 AHB GPIOA 6.3 5.3 4.1 5.3 GPIOB 6.3 5.3 4.1 5.3 GPIOC 6.3 5.2 4.1 5.2 GPIOD 8.1 6.8 5.4 6.8 GPIOE 6.7 5.7 4.5 5.7 GPIOF 5.9 4.9 3.9 4.9 GPIOG 7.2 6.1 4.9 6.1 GPIOH 1.7 1.4 1.1 1.4 CRC 0.8 0.7 0.5 0.7 AES 5 434 FLASH 21.6 18.1 16.0 -(6) DMA1 16.8 14.5 11.5 14.5 DMA2 15.7 13.6 10.8 13.6 All enabled 227 188 163 169.9 IDD (RTC) 0.4 µA IDD (LCD) 3.1 IDD (ADC)(3) 1450 IDD (DAC)(4) 340 IDD (COMP1) 0.16 IDD (COMP2) Slow mode 2 Fast mode 5 IDD (PVD / BOR)(5) 2.6 IDD (IWDG) 0.25 Table 24. Peripheral current consumption(1) (continued) Peripheral Typical consumption, VDD = 3.0 V, TA = 25 °C Unit Range 1, VCORE= 1.8 V VOS[1:0] = 01 Range 2, VCORE= 1.5 V VOS[1:0] = 10 Range 3, VCORE= 1.2 V VOS[1:0] = 11 Low-power sleep and run |
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