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STM32L162VC датащи(PDF) 76 Page - STMicroelectronics

номер детали STM32L162VC
подробное описание детали  Ultra-low-power platform
PDF  123 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32L162VC датащи(HTML) 76 Page - STMicroelectronics

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Electrical characteristics
STM32L162VC, STM32L162RC
76/123
DocID022881 Rev 10
Flash memory and data EEPROM
Table 36. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
VDD
Operating voltage
Read / Write / Erase
-1.65
-
3.6
V
tprog
Programming/ erasing
time for byte / word /
double word / half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during
the whole programming /
erase operation
TA = 25 °C, VDD = 3.6 V
-
600
900
µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.5
2.5
mA
Table 37. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Guaranteed by characterization results.
Typ Max
NCYC(2)
Cycling (erase / write)
Program memory
TA = -40°C to
105 °C
10
--
kcycles
Cycling (erase / write)
EEPROM data memory
300
--
tRET(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at TA = 85 °C
TRET = +85 °C
30
-
-
years
Data retention (EEPROM data memory)
after 300 kcycles at TA = 85 °C
30
-
-
Data retention (program memory) after
10 kcycles at TA = 105 °C
TRET = +105 °C
10
-
-
Data retention (EEPROM data memory)
after 300 kcycles at TA = 105 °C
10
-
-



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