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STM32L100C6 датащи(PDF) 50 Page - STMicroelectronics

номер детали STM32L100C6
подробное описание детали  Ultra-low-power platform
PDF  103 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM32L100C6 датащи(HTML) 50 Page - STMicroelectronics

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Electrical characteristics
STM32L100C6 STM32L100R8/RB
50/103
DocID024295 Rev 5
Table 17. Current consumption in Run mode, code with data processing running from RAM
Symbol
Parameter
Conditions
fHCLK
Typ
Max(1)
Unit
105 °C
IDD (Run
from RAM)
Supply current in
Run mode, code
executed from
RAM, Flash
switched off
fHSE = fHCLK
up to 16 MHz,
included
fHSE = fHCLK/2 above
16 MHz
(PLL ON)(2)
Range 3,
VCORE=1.2 V
VOS[1:0] = 11
1 MHz
200
300
µA
2 MHz
380
500
4 MHz
720
860
Range 2,
VCORE=1.5 V
VOS[1:0] = 10
4 MHz
0.9
1
mA
8 MHz
1.65
2
16 MHz
3.2
3.7
Range 1,
VCORE=1.8 V
VOS[1:0] = 01
8 MHz
2
2.5
16 MHz
4
4.5
32 MHz
7.7
8.5
HSI clock source
(16 MHz)
Range 2,
VCORE=1.5 V
VOS[1:0] = 10
16 MHz
3.3
3.8
Range 1,
VCORE=1.8 V
VOS[1:0] = 01
32 MHz
7.8
9.2
MSI clock, 65 kHz
Range 3,
VCORE=1.2 V
VOS[1:0] = 11
65 kHz
40
80
µA
MSI clock, 524 kHz
524 kHz
110
160
MSI clock, 4.2 MHz
4.2 MHz
700
820
1. Guaranteed by characterization results, unless otherwise specified.
2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).



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