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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151C4 датащи(PDF) 70 Page - STMicroelectronics |
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STM8L151C4 датащи(HTML) 70 Page - STMicroelectronics |
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70 / 142 page  Electrical parameters STM8L151x4/6, STM8L152x4/6 70/142 DocID15962 Rev 15 Figure 13. Typ. IDD(RUN) vs. VDD, fCPU = 16 MHz 1. Typical current consumption measured with code executed from RAM 5. CPU executing typical data processing 6. The run from RAM consumption can be approximated with the linear formula: IDD(run_from_RAM) = Freq * 90 µA/MHz + 380 µA 7. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 31. 8. Tested in production. 9. The run from Flash consumption can be approximated with the linear formula: IDD(run_from_Flash) = Freq * 195 µA/MHz + 440 µA 10. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 32. |
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